Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures

Characterization of diamond layers by SE: crystalline undoped diamond layers on silicon substrate.

Evolution of the experimental observables (Is, Ic) versus wavelength over a range extending from 2100 nm to 190 nm (0.6eV to 6.5eV).

Diamond is known for its hardness, thus it is used in industry in cutting and polishing tools. However this material has several other remarkable properties as optical transparency, chemical stability, thermal and electrical conductivities that could be controlled through the introduction of impurities  into the pure phase diamond crystal lattice.

Due to these properties, diamond is considered to be attractive for various fields of technology. It can be used as light detector in medical applications, development of  implants serving as semi-conductor interfaces with living tissues for biological applications. Furthermore, some of the impurities present in the diamond crystal lattice known as color centers are capable of light emission. Hence, diamond photoluminescent nanoparticles are used as markers in bio-imaging technology as well as detectors of weak magnetic fields at nanometric scale.

In this work, spectroscopic ellipsometry is used to investigate the optical and structural properties of crystalline doped and undoped diamond layers. This information is important for the optimization of the efficiency of these layers when involved in different kinds of devices.

Application downloads:

Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
DescriptionIn this work, spectroscopic ellipsometry (SE) was successfully applied to characterize the optical properties and the thicknesses of doped and undoped diamond layers. The sensitivity of this technique enables the doped layer to be distinguished from the undoped one in a sample consisting of a stack of these two layers. Moreover, an interface between the two layers has been detected. This work and others reported previously show clearly that ellipsometry is the technique of choice for the characterization of optical and structural properties of layered materials thanks to its sensitivity and the wide range of information it provides.
Size 1.28 MB
FiletypePDF

Related Products

UVISEL 2-HORIBA
MoreSpectroscopic Ellipsometer - UVISEL 2
Scientific Spectroscopic Ellipsometer Platform
UVISEL PLUS-HORIBA
MoreSpectroscopic Ellipsometer - UVISEL Plus
FUV to NIR: 190 to 2100 nm

REQUEST FOR INFORMATION

Do you have any questions or requests? Use this form to contact our specialists.